features z complements the 2SC2073. applications z power amplifier applications. z vertical output applications. maximum rating operating temperature range app lies unless otherwise specified symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current -1.5 a i b base current -0.5 a p c collector dissipation t a =25 t c =25 1.5 25 w t j, t stg junction and storage temperature -55 to +150 ? 2sa940 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 pb free plating product 2sa940 pnp silicon epitaxial power transistor pb 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters package dimension base 1 collector 2 3 emitter to-220c 1. base 2. collector 3. emitter 1 2 3
electrical characteristics ratings at 25 ambient temperature unless otherwise specified. parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -150 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -10 a emitter cut-off current i ebo v eb =-5v,i c =0 -10 a dc current gain h fe v ce =-10v,i c =-500ma 40 140 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma -1.5 v base-emitter voltage v be(on) v ce =-10v,i b =-500ma -0.65 -0.75 -0.85 v transition frequency f t v ce =-10v, i c =-0.5a 4 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 55 pf ? 2sa940 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3
typical characteristics @ ta=25 unless otherwise specified ? 2sa940 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3
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